ABSTRACT
This article presents a
X-band dual channel transmit/receive (T/R) Module for AESA radar applications. Instead of the conventional low temperature cofired ceramic technology, we suggested the heterojunction (Ceramic + FR4) multilayer substrate. This structure makes a simple T/R Module fabrication process with low cost. Dual channel allows reducing the size and weight of the T/R Module. The Substrates have RF cavities to attach each MMIC chip. The RF cavity has a subcover to seal the MMIC and to give an additional area for charging capacitors. The T/R Module's performance parameters include:
Evolution of AESA Radar Technology | 2012-08-15 | Microwave Journal
Explores the history of AESA radars and how continuing advances in MMIC materials and fabrication technologies, advancing packaging technology and exponential growth in digital circuits opens many possibilities for the future
In assessing futures for AESA technology, advanced RF device materials and processes will comprise one part of the equation and exponentially growing density in photolithographically fabricated digital components is the other part. Brookner has recently identified the following benchmarks and trends in device and materials technology:32
In conclusion, continuing advances in MMIC materials and fabrication technologies, advancing packaging technology and exponential growth in digital circuits open many possibilities for future AESA designs.
X-band dual channel transmit/receive (T/R) Module for AESA radar applications. Instead of the conventional low temperature cofired ceramic technology, we suggested the heterojunction (Ceramic + FR4) multilayer substrate. This structure makes a simple T/R Module fabrication process with low cost. Dual channel allows reducing the size and weight of the T/R Module. The Substrates have RF cavities to attach each MMIC chip. The RF cavity has a subcover to seal the MMIC and to give an additional area for charging capacitors. The T/R Module's performance parameters include:
- output power is 10 W,
- efficiency 23%, and
- noise figure is under 3 dB.
Evolution of AESA Radar Technology | 2012-08-15 | Microwave Journal
Explores the history of AESA radars and how continuing advances in MMIC materials and fabrication technologies, advancing packaging technology and exponential growth in digital circuits opens many possibilities for the future
In assessing futures for AESA technology, advanced RF device materials and processes will comprise one part of the equation and exponentially growing density in photolithographically fabricated digital components is the other part. Brookner has recently identified the following benchmarks and trends in device and materials technology:32
- Arrays using micro-electromechanical systems (MEMS) phase shifters
- Low cost 24 GHz phased-array car radars driving down T/R module costs through volume
- Extreme MMIC circuitry for 8 to 32 element arrays on single SiGe/BiCMOS chips
- GaN technology offering tenfold higher power and higher efficiency, permitting >1000 W peak power with single transistor packages
- Low cost Silicon based SiGe single chip
- Purdue University low-cost S-Band two panel GaN Digital Array Radar having 700 MHz bandwidth, 25 W per element peak; gets wide angle scan through use of electromagnetic band gap (EBG) material for increased isolation between antenna elements (lower mutual coupling); has potential of eliminating circulator
- Arrays with instantaneous bandwidths of 10:1 up to 33:1
- 20 dB increased receiver dynamic range through improved A/D linearity and reduced intermodulation
- Exploitation of meta-materials in passive antenna components
- 3D micromachining technology for interconnections
In conclusion, continuing advances in MMIC materials and fabrication technologies, advancing packaging technology and exponential growth in digital circuits open many possibilities for future AESA designs.
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